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Samsung 990 EVO Plus SSD 4TB MZ-V9S4T0BW
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Cool power through your day
Optimized efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Specifications:
APPLICATION
Client PCs
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0
DIMENSION (WxHxD)
80.15 x 22.15 x 2.38mm
WEIGHT
Max 9.0g Weight
STORAGE MEMORY
Samsung V-NAND TLC
CONTROLLER
Samsung in-house Controller
CACHE MEMORY
HMB(Host Memory Buffer)
TRIM SUPPORT
Supported
S.M.A.R.T SUPPORT
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal
IEEE1667 (Encrypted drive)
WWN SUPPORT
Not supported
DEVICE SLEEP MODE SUPPORT
Yes
SEQUENTIAL READ
1TB: Up to 7,150 MB/s
2TB: Up to 7,250 MB/s
4TB: Up to 7,250 MB/s
SEQUENTIAL WRITE
1TB: Up to 6,300 MB/s
2TB: Up to 6,300 MB/s
4TB: Up to 6,300 MB/s
RANDOM READ (4KB, QD32)
1TB: Up to 850,000 IOPS
2TB: Up to 1,000,000 IOPS
4TB: Up to 1,050,000 IOPS
RANDOM WRITE (4KB, QD32)
1TB: Up to 1,350,000 IOPS
2TB: Up to 1,350,000 IOPS
4TB: Up to 1,400,000 IOPS
AVERAGE POWER CONSUMPTION (SYSTEM LEVEL)
1TB: Average: Read 4.3 W / Write 4.2 W
2TB: Average: Read 4.6 W / Write 4.2 W
4TB: Average: Read 5.5 W / Write 4.8 W
POWER CONSUMPTION (IDLE)
1TB: Typical 60 mW
2TB: Typical 60 mW
4TB: Typical 60 mW
POWER CONSUMPTION (DEVICE SLEEP)
1TB: Typical 5mW
2TB: Typical 5mW
4TB: Typical 5mW
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
OPERATING TEMPERATURE
0 - 70 ? Operating Temperature
Shock
1,500 G & 0.5 ms (Half sine)
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